Reflectivity of crystalline Ge and Si at the melting temperature measured in real time with subnanosecond temporal resolution
نویسندگان
چکیده
Real time reflectivity measurements with subnanosecond time resolution have been used to determine the reflectivity at the melting temperature RS(Tm) of single crystalline Ge and Si at 514.5 nm. Due to the excellent time resolution and sensitivity achieved in a single exposure experiment, the reflectivity of the solid just before melting could be measured. Values of RS(Tm)50.470 60.006 and RS(Tm)50.44060.008 for c-Ge and c-Si have, respectively, been determined. These values, together with those determined by heating in vacuum in the range 300–800 K, are compared to those reported earlier in the literature and the differences are discussed. © 2001 American Institute of Physics. @DOI: 10.1063/1.1350413#
منابع مشابه
Dynamics of femtosecond laser-induced melting and amorphization of indium phosphide
Laser-induced melting and resolidification of single-crystalline indium phosphide (InP) upon irradiation with 150 fs laser pulses at 800 nm has been investigated by means of real-time-reflectivity measurements with subnanosecond time resolution. Melting of the surface is observed to occur very rapidly on a time scale shorter than our experimental resolution while the lifetime of the liquid phas...
متن کاملComparison of the effect of Si and Ge presence on phase formation process, the structural and magnetic properties of Co2FeX (X=Ge,Si) Heusler compounds
In this study, the Co2FeX (X=Ge, Si) Heusler compounds with 30 valence electrons, which are made by using mechanical alloying and arc melting methods were studied. The crystallization of samples was confirmed by XRD data in both manufacturing methods. The results showed that the presence of Si than Ge in the compound played a more effective role to creation a large scale atomic ordering, and th...
متن کاملThe Effects of Annealing Temperatures on Composition and Strain in SixGe1−x Obtained by Melting Growth of Electrodeposited Ge on Si (100)
The effects of annealing temperatures on composition and strain in SixGe1-x, obtained by rapid melting growth of electrodeposited Ge on Si (100) substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100 °C for 1 s. All annealed samples show single crystalline structure in (100) orientation. A significant appearance of Si-Ge vibration mode pe...
متن کاملAn Improvement in Temporal Resolution of Seismic Data Using Logarithmic Time-frequency Transform Method
The improvement in the temporal resolution of seismic data is a critical issue in hydrocarbon exploration. It is important for obtaining more detailed structural and stratigraphic information. Many methods have been introduced to improve the vertical resolution of reflection seismic data. Each method has advantages and disadvantages which are due to the assumptions and theories governing their ...
متن کاملDynamics of the solidification of laser-annealed Si thin films
Nanosccond time-resolved reflectivity and transmis~ion measurements are uscd for the observation of solidification phenomena, following incornpletc or complete rneltrng of thin Si films ( d = 125 nm) by nanosecond laser pulses. Solidification is observed to proceed at the liquid-solid interface as Tong as the film is not melted completely. OR complete melting of the film, nucleation in the liqu...
متن کامل